InP Wafer Specifications

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Specifications for 100 mm diameter InP Wafers

Conductivity Type, Doping, and Growth Method

The 100 InP Wafers are available in a range of configurations based on their dopant type, etch pit density, and intended application.

  1. Wafers with SI (n-type) conductivity and Fe doping:

    • Etch Pit Density: ≤5000
    • Growth method: VGF
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: HBT, Detector, Solar

  2. Wafers with SC (n-type) conductivity and S doping:

    • Etch Pit Density: ≤500
    • Growth method: VGF
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LED, LASER, Detector

  3. Wafers with SC (n-type) conductivity and S doping:

    • Etch Pit Density: ≤50
    • Growth method: VGF
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LASER, Detector

Specifications for 3 mm diameter InP Wafers

Conductivity Type, Doping, and Growth Method

The 3 InP Wafers are available in a range of configurations based on their dopant type, etch pit density, and intended application.

  1. Wafers with SI (n-type) conductivity and Fe doping:

    • Etch Pit Density: ≤5000
    • Growth method: VGF
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: HBT, Detector, Solar

  2. Wafers with SC (n-type) conductivity and S doping:

    • Etch Pit Density: ≤500
    • Growth method: VGF
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LASER, Detector

  3. Wafers with SC (n-type) conductivity and S doping:

    • Etch Pit Density: ≤50
    • Growth method: VGF
    • Thickness: 625
    • Flat/Notch: Flat
    • Polish: single, double
    • Application: LASER, Detector

Standard Dimensions and Tolerances for 100 mm Diameter InP Wafers

The mechanical specifications of the wafers are as follows:

  • Diameter: 100 mm, Tolerance: +/- 0.5 mm
  • Thickness, Center Point: 625 µm, Tolerance: +/- 25 µm
  • Primary Flat Length: 32.5 mm, Tolerance: +/- 2 mm
  • Secondary Flat Length: 18 mm, Tolerance: +/- 2 mm
  • Flat orientation (standard): US/EJ deg, Tolerance: +/- 0.5 deg
  • Flat orientation (high precision): US/EJ deg, Tolerance: +/- 0.02 deg
  • Surface orientation (standard): (100)* deg, Tolerance: +/- 0.3 deg
  • Surface orientation (high precision): (100)* deg, Tolerance: +/- 0.05 deg

Standard Dimensions and Tolerances for 3" Diameter InP Wafers

The mechanical specifications of the wafers are as follows:

  • Diameter: 76.2 mm, Tolerance: +/- 0.5 mm
  • Thickness, Center Point: 625 µm, Tolerance: +/- 25 µm
  • Primary Flat Length: 22 mm, Tolerance: +/- 2 mm
  • Secondary Flat Length: 11 mm, Tolerance: +/- 2 mm
  • Flat orientation (standard): US/EJ deg, Tolerance: +/- 0.5 deg
  • Flat orientation (high precision): US/EJ deg, Tolerance: +/- 0.02 deg
  • Surface orientation (standard): (100)* deg, Tolerance: +/- 0.3 deg
  • Surface orientation (high precision): (100)* deg, Tolerance: +/- 0.05 deg